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Strategic Heteroatom Doping for Electronic Tuning and Redox Optimization in Functional Materials
Abstract
The increasing need to use high-performance materials in energy storage, energy catalysis, electronics and sensing has heightened efforts to seek ways of precisely controlling the electronic and chemical characteristics of these materials. The deliberate introduction of foreign atoms into a bulk lattice, heteroatom doping, has proven to be a potent and scalable method of controlling the band structure, charge dynamics, and reactivity at the surface. This chapter will discuss strategic boron (B), nitrogen (N), and phosphorus (P) doping in functional materials with a particular focus on their specific contributions to the redox behavior and electronic structure. B represents the introduction of electron-deficient sites to increase the oxidation activity, N increases the electron density to promote conductivity and reduce selectivity, and P brings about lattice distortion, creating more active sites and ion storage capacity. B-N and N-P combinations exhibit synergies whose effects are greater than those of single dopants.
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