Wrapped Channel FET (WCFET): Future of Low Power Application

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Author(s): Iqbal Hasan (Jamia Millia Islamia, India), Pranav Kumar Asthana (Indian Institute of Technology, Kanpur, India), Yogesh Goswami (Indian Institute of Technology, Roorkee, India)and S. A. M. Rizvi (Jamia Millia Islamia, India)
Copyright: 2022
Volume: 11
Issue: 1
Pages: 14
Source title: International Journal of Electronics, Communications, and Measurement Engineering (IJECME)
Editor(s)-in-Chief: Md. Zia-Ur- Rahman (K L University, India), Augustine O. Nwajana (University of Greenwich, UK)and Ireneusz Jablonski (Wroclaw University of Technology, Poland)
DOI: 10.4018/IJECME.297084

Keywords: Education / Engineering Science Reference / Materials Science and Engineering / Surveys, Measurements & Response Systems

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Abstract

In this article, we examined the electrical characteristic of proposed new device structure, Wrapped Channel Field Effect Transistor (WCFET). Results of WCFET have been analyzed using Atlas 3-D simulator. WCFET shows better transfer characteristics with ON-current ION of ~10-6A and leakage current IOFF of ~10-16 A. Optimization of device characteristics has done with doping concentration (ND), gate work function (ΦG) and spacer dielectric. Impact of gate length and semiconductor film thickness variation on drain current, subthreshold slope (SS) and DIBL are also investigated. Further, effects of various gate dielectric materials such as SiO2, Si3N3, HfO2 and TiO2 are examined w.r.t. switching characteristics of WCFET. To validate of device compatibility with power supply scaling, we inspected full range variation of VDS ≈ (0.05V-to-0.7V) on transfer characteristics.

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Wrapped Channel FET (WCFET): Future of Low Power Application

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