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Analytical Modeling for Fabrication of Biomedical Pressure Sensors by Bulk Micromachining Technology: Silicon Capacitive Pressure Sensors
Abstract
This article presents an analytical modeling of the boron-diffused silicon layers used as a self-stop etching process for the fabrication of the silicon capacitive sensors for biomedical applications by bulk micromachining technology, a key process for an accurate control of the membrane characteristics. Analytical expressions are obtained describing the boron profiles after the diffusion from oxidizing (BBr3, B2O3) and non-oxidizing boron-nitride (BN) source, showing a very good agreement with the experimental data, and which obey two distinct universal curves, independent of diffusion time and temperature. These results are used to calculate the silicon etching rate and time by analytical relations, as a function of the depth and etching temperature in 10% and 24% alkaline-type solutions of KOH (NaOH, LiOH) or ethylene-diamine-based (EDP) solution, allowing an accurate control of the thickness of the silicon membrane and of the processing-induced stress, which finally determines the technical characteristics of the silicon capacitive sensors for biomedical applications.
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