Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

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Author(s): Deep Kamal Kaur Randhawa (Guru Nanak Dev University, Regional Campus, Jalandhar, India), Paramjot Singh (Guru Nanak Dev University, Regional Campus, Jalandhar, India)and Tarun (Guru Nanak Dev University, Regional Campus, Jalandhar, India)
Copyright: 2020
Pages: 15
Source title: Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET)
Source Author(s)/Editor(s): Balwinder Raj (National Institute of Technical Teachers Training and Research, Chandigarh, India), Mamta Khosla (Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India)and Amandeep Singh (National Institute of Technology, Srinagar, India)
DOI: 10.4018/978-1-7998-1393-4.ch010

Keywords: Computer Engineering / Computer Science & IT / Information Science Reference / Nanotechnology

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Abstract

Silicene is one of the most interesting nanomaterials. In this chapter, computational studies have been done on Silicene nanotube and nanoribbon-based FETs to analyze their transport properties. The FET is designed from armchair nanoribbon and single wall nanotube. The scattering region is capped by a dielectric and a metallic layer to form a gate. The conductance versus gate bias voltage, conductance versus temperature up to 2000K, and electrode temperature versus current characteristics are calculated and plotted along with the design of the equivalent model of the structure. Extended Huckel-based calculations were used, and the analysis shows the transport properties of both structures.

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Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

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