Overview of Radiation-Hardened SRAM Cell Design Techniques

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Author(s): Nishant Biyani (Birla Institute of Technology Mesra, Ranchi, India), Monalisa Pandey (Meerut Institute of Engineering and Technology, India), Shashank Kumar Dubey (Global Academy of Technology, Bengaluru, India)and Aminul Islam (Birla Institute of Technology Mesra, Ranchi, India)
Copyright: 2025
Pages: 16
Source title: Exploring the Intricacies of Digital and Analog VLSI
Source Author(s)/Editor(s): Koushik Guha (National Institute of Technology, Silchar, India), Jyoti Kandpal (Graphic Era Hill University, Dehradun, India)and Swagata Devi (Faculty of Engineering, Assam Down Town University, India)
DOI: 10.4018/979-8-3693-8084-0.ch010

Keywords: Computer Engineering / Engineering Science Reference / High Performance Computing / Science & Engineering

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Abstract

In deep space high-energy particles and fluctuation in temperature lead to single-event upsets (SEUs) in SRAM. It is difficult for traditional 6T SRAM cell to withstand this space environment. Therefore, we use different types of SRAM cells such as RHMD10T, QUCCE 10T, QUCCE 12T, HRRT 13T SRAM, NS10T, PS10T, RHBD10T, RHRD 12T, SRRD12T and QUATRO 12T. Moreover, there is a brief description of each SRAM cell with their respective advantages and disadvantages in comparison to other SRAM cells used in this harsh environment. It is essential to select materials that can tolerate this extreme environment and operate as radiation resistant materials. It includes HfO2 and GaN.Alternatively, materials having larger permittivity, which are known as high-k materials such as Al2O3, ZrO2, and La2O3, can replace SiO2which can replace SiO2 as the gate dielectric.

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Overview of Radiation-Hardened SRAM Cell Design Techniques

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