Fundamentals of Semiconductor and Future Aspects

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Author(s): Nisha Chugh (Vivekananda Institute of Professional Studies, India)and Nishtha Kansal (Vivekananda Institute of Professional Studies, India)
Copyright: 2025
Pages: 26
Source title: Integration of AI, Quantum Computing, and Semiconductor Technology
Source Author(s)/Editor(s): Brojo Kishore Mishra (NIST University, Berhampur, India)
DOI: 10.4018/979-8-3693-7076-6.ch016

Keywords: Electrical and Electronics Engineering / Engineering Science Reference / Knowledge Management and Library Science / Quantum Information & Computing

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Abstract

This chapter provides a comprehensive overview of the fundamental principles of semiconductor devices, focusing on their physical properties, operational mechanisms, and the diverse range of applications they support. Key topics include the behaviour of charge carriers in semiconductor materials, the formation and characteristics of p-n junctions, and the operational principles of key devices FETs, CMOS and HEMTs. HEMTs have become a cornerstone in modern electronics due to their superior performance characteristics, including high electron mobility, low noise, and high gain. This chapter delves into the fundamental principles of HEMTs, exploring their unique heterostructure design that leverages materials such as GaAs and AlGaAs to create a high-speed, low-noise transistor. The high-frequency capabilities of HEMTs make them ideal for applications in RF and microwave circuits, satellite communications, and radar systems.

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