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Fabrication and Characterization of Thin Film Capacitor With Ferroelectric Material
Abstract
Ferroelectric thin-film capacitors are a significant field of study in modern electronics due to they have several benefits, including high capacitance density, low leakage currents, and non-volatile memory characteristics. This chapter examines the fabrication and characterization strategies used in the creation of ferroelectric thin-film capacitors with dielectric BaTiO3 and PbTiO3 thin film deposited in the LaNiO3 electrode. The crystallographic analysis of deposited film is carried out using XRD and found that the film is crystalline with orientation (101) for BaTiO3 and (110) for PbTiO3. With SEM analysis, we found that the obtained grain size is 35 nm and 46 nm with the content of LaNiO3 5% and 10% respectively. The obtained capacitance value with a dielectric of BaTiO3 is 59.6 pF and PbTiO3 is 1.22 pF. The actuator based on a fabricated capacitor found a displacement of 0.368 mm with ±1V.
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