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Bundled SWCNT for Global VLSI Interconnects
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Author(s): Raj Kumar (Panjab University, India)and Shashi Bala (Chandigarh Group of Colleges, Landran, India)
Copyright: 2020
Pages: 29
Source title:
Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET)
Source Author(s)/Editor(s): Balwinder Raj (National Institute of Technical Teachers Training and Research, Chandigarh, India), Mamta Khosla (Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India)and Amandeep Singh (National Institute of Technology, Srinagar, India)
DOI: 10.4018/978-1-7998-1393-4.ch008
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Abstract
Carbon nanotube (CNT) has been declared the most attractive and suitable material for VLSI sub-micron technology. Because of CNT's phenomenal physical, electrical, and mechanical properties, it is more advantageous than copper interconnect material. In this chapter, RLC equivalent model of bundled single-wall CNT (SWCNT) is presented by using driver-interconnect-load (DIL) system with CMOS driver. The crosstalk delay is calculated for two-line bus architecture made of two parallel lines (i.e., upper as aggressor and lower as victim). From the simulation, it has been observed that crosstalk delay increases with increase in interconnect length and transition time, whereas it decreases with increased spacing between the lines (aggressor and victim). However, crosstalk delay decreases as the number of tubes in a bundle increases.
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