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Phononic Engineering for Hot Carrier Solar Cells
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Author(s): Sana Laribi (Institute of Research and Development on Photovoltaic Energy (IRDEP), France), Arthur Le Bris (Institute of Research and Development on Photovoltaic Energy (IRDEP), France), Lun Mei Huang (Institute of Research and Development on Photovoltaic Energy (IRDEP), France), Par Olsson (Institute of Research and Development on Photovoltaic Energy (IRDEP), France)and Jean Francois Guillemoles (Institute of Research and Development on Photovoltaic Energy (IRDEP), France)
Copyright: 2013
Pages: 29
Source title:
Advanced Solar Cell Materials, Technology, Modeling, and Simulation
Source Author(s)/Editor(s): Laurentiu Fara (Polytechnic University of Bucharest, Romania)and Masafumi Yamaguchi (Toyota Technological Institute, Japan)
DOI: 10.4018/978-1-4666-1927-2.ch012
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Abstract
In this chapter, the authors first analyse the operation of a hot carrier solar cell and lay down the general principles. They then discuss the opportunity of phonon engineering to improve the phonon bottleneck. Finally, they present how these can be modeled in nanostuctures comprising several thousand atoms, where true 3D phonon dispersion relations for Si-Ge nano-structures are obtained using first principles methods. The effects of the nano-structure size and geometry on the phonon dispersion relations are investigated. The possible phonon decay processes in the nano-structures are discussed and compared with the bulk crystal materials. The performance of calculated nano-structures on the hot carrier solar cell is evaluated with the acquired knowledge of phonon modes.
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